GuaranTee Supplier
11 Years
5N10-MS
5N10-MS is a high cell density trench N-channel MOSFET offering low RDSON and high efficiency for small-power and load switches, RoHS compliant and reliability certified
- Channel Configuration :Single N Channel
- Drain-Source Voltage (Vdss):100V
- Continuous Drain Current (Id):5A
- Drain-Source On-Resistance (RDS(on)):90mΩ@10V
- Power Dissipation (Pd):2.5W
- Gate Threshold Voltage (Vgs(th)) :1.5V
- Package:SOT-23
- Packaging Type:Tape&Reel
USD 0.04
27000
Supplier Information
Email:omnichip@ttbridge.com
Tel:15670610275
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