OmniChip Technology
  • 5N10-MS
  • 5N10-MS
  • 5N10-MS
  • 5N10-MS
  • 5N10-MS
  • 5N10-MS
  • 5N10-MS
  • 5N10-MS
  • 5N10-MS
  • 5N10-MS

5N10-MS

5N10-MS is a high cell density trench N-channel MOSFET offering low RDSON and high efficiency for small-power and load switches, RoHS compliant and reliability certified

  • Channel Configuration :Single N Channel
  • Drain-Source Voltage (Vdss):100V
  • Continuous Drain Current (Id):5A
  • Drain-Source On-Resistance (RDS(on)):90mΩ@10V
  • Power Dissipation (Pd):2.5W
  • Gate Threshold Voltage (Vgs(th)) :1.5V
  • Package:SOT-23
  • Packaging Type:Tape&Reel

USD 0.04

27000

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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