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OmniChip Technology
GuaranTee Supplier
11 Years
MS50N06
MS50N06 is a Trench DMOS N-channel power MOSFET offering ultra-low RDS(ON), fast switching, and high avalanche energy resistance for high-efficiency applications.
- Channel Configuration ：Single N Channel
- Drain-Source Voltage (Vdss)：60V
- Continuous Drain Current (Id)：50A
- Drain-Source On-Resistance (RDS(on))：12mΩ@10V
- Power Dissipation (Pd)：65W
- Gate Threshold Voltage (Vgs(th))：1.5V
- Package：TO-252-2
- Packaging Type：Tape&Reel
USD 0.12
27000
Supplier Information
Email：omnichip@ttbridge.com
Tel：15670610275
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