OmniChip Technology
  • SI2333CDS-T1-MS
  • SI2333CDS-T1-MS
  • SI2333CDS-T1-MS
  • SI2333CDS-T1-MS
  • SI2333CDS-T1-MS
  • SI2333CDS-T1-MS
  • SI2333CDS-T1-MS
  • SI2333CDS-T1-MS
  • SI2333CDS-T1-MS
  • SI2333CDS-T1-MS

SI2333CDS-T1-MS

SI2333CDS-T1-MS is an advanced trench MOSFET featuring low RDS(ON) and low gate charge, operating down to 2.5V gate drive for battery protection and power switching.

  • Channel Configuration:Single P Channel
  • Drain-Source Voltage (Vdss):18V
  • Continuous Drain Current (Id):7A
  • Drain-Source On-Resistance (RDS(on)):22mΩ@4.5V
  • Power Dissipation (Pd):1W
  • Package:SOT-23-3L
  • Packaging Type:Tape&Reel

USD 0.06

7800

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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