GuaranTee Supplier
11 Years
MSK30N03DF
MSK30N03DF is an advanced trench N-channel MOSFET with low RDS(ON) and low gate charge with 4.5V gate drive, ideal for battery protection and power switching applications.
- Channel Configuration:Single N Channel
- Drain-Source Voltage (Vdss):30V
- Continuous Drain Current (Id):30A
- Drain-Source On-Resistance (RDS(on)):9mΩ@10V
- Power Dissipation (Pd):20W
- Package:DFN-8(3.3x3.3)
- Packaging Type:Tape&Reel
USD 0.15
2900
Supplier Information
Email:omnichip@ttbridge.com
Tel:15670610275
Recommended products
NTR4101PT1G-MS
NTR4101PT1G-MS is a P-channel enhancement-mode power MOSFET featuring trench DMOS technology, low on-resistance, fast switching, and high avalanche energy capability.
collect:0
AO3409
AO3409 is a 30V, -3A P-channel MOSFET with 75mΩ RDS(ON) at -10V gate drive, offering fast switching for laptop power management and load switching.
collect:0
MS30N06
MS30N06 is a trench MOSFET featuring low RDS(ON), low gate charge, and 4.5V gate drive capability for battery protection and efficient switching applications.
collect:0
SIS402DN-T1-GE3-MS
SIS402DN-T1-GE3-MS is an N-channel MOSFET rated at 300V and 80A, featuring 4.7mΩ RDS(ON) for efficient power conversion and motor control.
collect:0









