OmniChip Technology
  • RU3030M2-TP
  • RU3030M2-TP
  • RU3030M2-TP
  • RU3030M2-TP
  • RU3030M2-TP
  • RU3030M2-TP
  • RU3030M2-TP
  • RU3030M2-TP
  • RU3030M2-TP
  • RU3030M2-TP

RU3030M2-TP

RU3030M2-TP is a 30V N-channel MOSFET with 9mΩ RDS(on) at 10V, 13mΩ at 4.5V, and PDFN 3.3x3.3 package for high-efficiency switching.

  • Drain-Source Voltage (Vdss) :30V
  • Continuous Drain Current (Id) :42A
  • On-Resistance (RDS(on)) :13m0@4.5V
  • Power Dissipation (Pd):35W
  • Input capacitance (Ciss) :763pF
  • Reverse transfer capacitance (Crss) :81pF
  • Working temperature:-55°C~+150°C
  • Package Type :DFN-8(3x3)​
  • Packaging Method :Tape & Reel
  • Gross Weight :0.827(g)

USD 0.1719

18000

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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