Product Images
Datasheet PDF
Enlarge View
Download PDF
OmniChip Technology
GuaranTee Supplier
11 Years
FDD5614P
FDD5614P P-Channel Power MOSFET uses trench DMOS technology for low RDS(ON), fast switching, high-energy pulse handling and efficient power switching applications.
- Channel Configuration：Single P Channel
- Drain-Source Voltage (Vdss)：60V
- Continuous Drain Current (Id)：15A
- Drain-Source On-Resistance (RDS(on))：75mΩ@10V
- Power Dissipation (Pd)：40W
- Package：TO-252-2
- Packaging Type：Tape&Reel
USD 0.32
1400
Supplier Information
Email：omnichip@ttbridge.com
Tel：15670610275
Recommended products
NTR4101PT1G-MS
NTR4101PT1G-MS is a P-channel enhancement-mode power MOSFET featuring trench DMOS technology, low on-resistance, fast switching, and high avalanche energy capability.
collect：0
AO3409
AO3409 is a 30V, -3A P-channel MOSFET with 75mΩ RDS(ON) at -10V gate drive, offering fast switching for laptop power management and load switching.
collect：0
MS30N06
MS30N06 is a trench MOSFET featuring low RDS(ON), low gate charge, and 4.5V gate drive capability for battery protection and efficient switching applications.
collect：0
SIS402DN-T1-GE3-MS
SIS402DN-T1-GE3-MS is an N-channel MOSFET rated at 300V and 80A, featuring 4.7mΩ RDS(ON) for efficient power conversion and motor control.
collect：0