Product Images
Datasheet PDF
Enlarge View
Download PDF
OmniChip Technology
GuaranTee Supplier
11 Years
CSD18563Q5A-MS
SI2309CDS-T1-GE3-MS is a P-channel MOSFET rated at -60V and -1.8A, featuring 200mΩ RDS(ON) at -10V, fast switching and improved dv/dt capability.
- Channel Configuration：Single N Channel
- Drain-Source Voltage (Vdss)：60V
- Continuous Drain Current (Id)：80A
- Drain-Source On-Resistance (RDS(on))：5.3mΩ@10V
- Power Dissipation (Pd)：108W
- Package：DFN-8L(5x6)
- Packaging Type：Tape&Reel
USD 0.59
180
Supplier Information
Email：omnichip@ttbridge.com
Tel：15670610275
Recommended products
NTR4101PT1G-MS
NTR4101PT1G-MS is a P-channel enhancement-mode power MOSFET featuring trench DMOS technology, low on-resistance, fast switching, and high avalanche energy capability.
collect：0
AO3409
AO3409 is a 30V, -3A P-channel MOSFET with 75mΩ RDS(ON) at -10V gate drive, offering fast switching for laptop power management and load switching.
collect：0
MS30N06
MS30N06 is a trench MOSFET featuring low RDS(ON), low gate charge, and 4.5V gate drive capability for battery protection and efficient switching applications.
collect：0
SIS402DN-T1-GE3-MS
SIS402DN-T1-GE3-MS is an N-channel MOSFET rated at 300V and 80A, featuring 4.7mΩ RDS(ON) for efficient power conversion and motor control.
collect：0