OmniChip Technology
  • SI2343DS-T1-E3-MS
  • SI2343DS-T1-E3-MS
  • SI2343DS-T1-E3-MS
  • SI2343DS-T1-E3-MS
  • SI2343DS-T1-E3-MS
  • SI2343DS-T1-E3-MS
  • SI2343DS-T1-E3-MS
  • SI2343DS-T1-E3-MS
  • SI2343DS-T1-E3-MS
  • SI2343DS-T1-E3-MS

SI2343DS-T1-E3-MS

SI2343DS-T1-E3-MS is a P-channel power MOSFET featuring trench DMOS technology, low RDS(ON) and high avalanche energy capability for fast switching.

  • Channel Configuration:Single P Channel
  • Drain-Source Voltage (Vdss):30V
  • Continuous Drain Current (Id):4A
  • Drain-Source On-Resistance (RDS(on)):45mΩ@10V
  • Power Dissipation (Pd):1.56W
  • Package:SOT-23
  • Packaging Type:Tape&Reel

USD 0.09

1400

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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