OmniChip Technology
  • AO6800-MS
  • AO6800-MS
  • AO6800-MS
  • AO6800-MS
  • AO6800-MS
  • AO6800-MS
  • AO6800-MS
  • AO6800-MS
  • AO6800-MS
  • AO6800-MS

AO6800-MS

AO6800-MS is a 30V, 4A MOSFET with 30mΩ RDS(ON) at 10V gate drive, featuring fast switching and improved dv/dt capability for SMPS and synchronous rectification.

  • Channel Configuration:Dual N Channel
  • Drain-Source Voltage (Vdss):30V
  • Continuous Drain Current (Id):4A
  • Drain-Source On-Resistance (RDS(on)):30mΩ@10V;40mΩ@4.5V
  • Power Dissipation (Pd):1.25W
  • Package:SOT-23-6L
  • Packaging Type:Tape&Reel

USD 0.08

2800

contact shop

Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

Recommended products

MLG30N60FDL

MLG30N60FDL is a 600V 60A FieldStop IGBT with 187W power dissipation, designed for efficient high-power switching and power conversion applications.

collect:0

MLG75N60FDK

MLG75N60FDK is a 600V 75A FieldStop Trench IGBT, designed for high-current switching and efficient power conversion applications.

collect:0

MLG40T120FDL5

MLG40T120FDL5 is a 1200V 40A Trench IGBT with low VCE(sat), optimized switching performance, low gate charge and 428W power dissipation.

collect:0

MLG25N135RK

MLG25N135RK is a 1350V 25A FieldStop Trench IGBT, designed for high-voltage switching and efficient power conversion applications.

collect:0