OmniChip Technology
  • MSISH101DN-T1-GE3
  • MSISH101DN-T1-GE3
  • MSISH101DN-T1-GE3
  • MSISH101DN-T1-GE3
  • MSISH101DN-T1-GE3
  • MSISH101DN-T1-GE3
  • MSISH101DN-T1-GE3
  • MSISH101DN-T1-GE3
  • MSISH101DN-T1-GE3
  • MSISH101DN-T1-GE3

MSISH101DN-T1-GE3

MSISH101DN-T1-GE3 is a 30V, 70A P-channel MOSFET with 6.5mΩ RDS(ON), designed for efficient power conversion, battery protection, and load switching.

  • Channel Configuration:Single P Channel
  • Drain-Source Voltage (Vdss):30V
  • Continuous Drain Current (Id):70A
  • Drain-Source On-Resistance (RDS(on)):6.5mΩ@10V
  • Power Dissipation (Pd):31.2W
  • Package:DFN-8L(3x3)
  • Packaging Type:Tape&Reel

USD 0.25

600

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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