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OmniChip Technology
GuaranTee Supplier
11 Years
3N10-MS
3N10-MS is a high-cell-density trench N-channel MOSFET offering low RDS(ON) and high efficiency for small-power switching and load switch applications.
- Channel Configuration：Single N Channel
- Drain-Source Voltage (Vdss)：100V
- Continuous Drain Current (Id)：3A
- Drain-Source On-Resistance (RDS(on))：90mΩ@10V；120mΩ@4.5V
- Power Dissipation (Pd)：1W
- Package：SOT-23
- Packaging Type：Tape&Reel
USD 0.08
3200
Supplier Information
Email：omnichip@ttbridge.com
Tel：15670610275
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