OmniChip Technology
  • SI2307CDS
  • SI2307CDS
  • SI2307CDS
  • SI2307CDS
  • SI2307CDS
  • SI2307CDS
  • SI2307CDS
  • SI2307CDS
  • SI2307CDS
  • SI2307CDS

SI2307CDS

SI2307CDS is a P-channel enhancement-mode power MOSFET featuring trench DMOS technology, low RDS(ON), fast switching, and high energy pulse capability

  • Channel Configuration:Single P Channel
  • Drain-Source Voltage (Vdss):30V
  • Continuous Drain Current (Id):3.4A
  • Drain-Source On-Resistance (RDS(on)):75mΩ@10V
  • Power Dissipation (Pd):1.56W
  • Package:SOT-23
  • Packaging Type:Tape&Reel

USD 0.11

3000

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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