Product Images
Datasheet PDF
Enlarge View
Download PDF
OmniChip Technology
GuaranTee Supplier
11 Years
SIS414DN-T1-GE3-MS
SSIS414DN-T1-GE3-MS is a 30V, 20A N-channel MOSFET in a DFN3x3-8L package, featuring 15mΩ RDS(ON) for efficient power management and motor drive.
- Channel Configuration：Single N Channel
- Drain-Source Voltage (Vdss)：30V
- Continuous Drain Current (Id)：20A
- Drain-Source On-Resistance (RDS(on))：15mΩ@10V
- Power Dissipation (Pd)：5.5W
- Package：DFN-8L(3x3)
- Packaging Type：Tape&Reel
USD 0.27
900
Supplier Information
Email：omnichip@ttbridge.com
Tel：15670610275
Recommended products
MLG30N60FDL
MLG30N60FDL is a 600V 60A FieldStop IGBT with 187W power dissipation, designed for efficient high-power switching and power conversion applications.
collect：0
MLG75N60FDK
MLG75N60FDK is a 600V 75A FieldStop Trench IGBT, designed for high-current switching and efficient power conversion applications.
collect：0
MLG40T120FDL5
MLG40T120FDL5 is a 1200V 40A Trench IGBT with low VCE(sat), optimized switching performance, low gate charge and 428W power dissipation.
collect：0
MLG25N135RK
MLG25N135RK is a 1350V 25A FieldStop Trench IGBT, designed for high-voltage switching and efficient power conversion applications.
collect：0