OmniChip Technology
  • SIRA12DP-T1-GE3-MS
  • SIRA12DP-T1-GE3-MS
  • SIRA12DP-T1-GE3-MS
  • SIRA12DP-T1-GE3-MS
  • SIRA12DP-T1-GE3-MS
  • SIRA12DP-T1-GE3-MS
  • SIRA12DP-T1-GE3-MS
  • SIRA12DP-T1-GE3-MS
  • SIRA12DP-T1-GE3-MS
  • SIRA12DP-T1-GE3-MS

SIRA12DP-T1-GE3-MS

SIRA12DP-T1-GE3-MS is a 30V, 120A N-channel MOSFET in a DFN5x6-8L package, featuring 3.5mΩ RDS(ON) for efficient power conversion and high-current switching.

  • Channel Configuration:Single N Channel
  • Drain-Source Voltage (Vdss):30V
  • Continuous Drain Current (Id):120A
  • Drain-Source On-Resistance (RDS(on)):3.5mΩ@10V
  • Power Dissipation (Pd):187W
  • Package:DFN-8L(5x6)
  • Packaging Type:Tape&Reel

USD 0.37

480

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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