OmniChip Technology
  • PESD5V0V1BB,115-JSM
  • PESD5V0V1BB,115-JSM
  • PESD5V0V1BB,115-JSM
  • PESD5V0V1BB,115-JSM
  • PESD5V0V1BB,115-JSM
  • PESD5V0V1BB,115-JSM
  • PESD5V0V1BB,115-JSM
  • PESD5V0V1BB,115-JSM
  • PESD5V0V1BB,115-JSM
  • PESD5V0V1BB,115-JSM

PESD5V0V1BB,115-JSM

This TVS diode meets IEC 61000-4-2 ±25kV contact/air, IEC 61000-4-4 EFT 40A, and IEC 61000-4-5 surge 8A, using solid-state silicon avalanche technology.

  • Clamping voltage :15V
  • Peak pulse current (Ipp) :8A@8/20us
  • Peak pulse power (Ppp) :90W@8/20us
  • Breakdown voltage (VBR) :6V
  • Reverse leakage current (Ir) :200nA
  • Operating temperature:-55℃~+150℃
  • Product Packaging :SOD-523​
  • Packing Type :Tape & Reel

USD 0.0347

18000

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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