OmniChip Technology
  • 2N7002W N-Channel MOSFET 60V 115mA SOT-323 Low RDS(ON) 5Ω
  • 2N7002W N-Channel MOSFET 60V 115mA SOT-323 Low RDS(ON) 5Ω
  • 2N7002W N-Channel MOSFET 60V 115mA SOT-323 Low RDS(ON) 5Ω
  • 2N7002W N-Channel MOSFET 60V 115mA SOT-323 Low RDS(ON) 5Ω
  • 2N7002W N-Channel MOSFET 60V 115mA SOT-323 Low RDS(ON) 5Ω
  • 2N7002W N-Channel MOSFET 60V 115mA SOT-323 Low RDS(ON) 5Ω
  • 2N7002W N-Channel MOSFET 60V 115mA SOT-323 Low RDS(ON) 5Ω
  • 2N7002W N-Channel MOSFET 60V 115mA SOT-323 Low RDS(ON) 5Ω
  • 2N7002W N-Channel MOSFET 60V 115mA SOT-323 Low RDS(ON) 5Ω
  • 2N7002W N-Channel MOSFET 60V 115mA SOT-323 Low RDS(ON) 5Ω

2N7002W N-Channel MOSFET 60V 115mA SOT-323 Low RDS(ON) 5Ω

2N7002W N-channel MOSFET with 60V/115mA, low RDS(ON) <5Ω, trench technology, SOT-323.

  • Drain-Source Voltage (Vdss) :60V
  • Continuous Drain Current (Id) :115mA
  • On-Resistance (RDS(on)):900mΩ@10V
  • Product packaging :SOT-323​
  • Packing Method :Tape & Reel
  • Gross Weight:0.015(g)

USD 0.019

13000

contact shop

Product Images

Datasheet PDF

Enlarge View Download PDF

Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

Recommended products

NTR4101PT1G-MS

NTR4101PT1G-MS is a P-channel enhancement-mode power MOSFET featuring trench DMOS technology, low on-resistance, fast switching, and high avalanche energy capability.

collect:0

AO3409

AO3409 is a 30V, -3A P-channel MOSFET with 75mΩ RDS(ON) at -10V gate drive, offering fast switching for laptop power management and load switching.

collect:0

MS30N06

MS30N06 is a trench MOSFET featuring low RDS(ON), low gate charge, and 4.5V gate drive capability for battery protection and efficient switching applications.

collect:0

SIS402DN-T1-GE3-MS

SIS402DN-T1-GE3-MS is an N-channel MOSFET rated at 300V and 80A, featuring 4.7mΩ RDS(ON) for efficient power conversion and motor control.

collect:0