OmniChip Technology
  • MSG30T65HHT1
  • MSG30T65HHT1
  • MSG30T65HHT1
  • MSG30T65HHT1
  • MSG30T65HHT1
  • MSG30T65HHT1
  • MSG30T65HHT1
  • MSG30T65HHT1
  • MSG30T65HHT1
  • MSG30T65HHT1

MSG30T65HHT1

Trench FS IGBT features low gate charge, fast switching and low switching loss for power factor correction (PFC) and UPS applications.

  • IGBT Technology:Field Stop (FS)
  • Power Dissipation (Pd):35 W
  • Collector-Emitter Breakdown Voltage (VCES):650 V
  • Continuous Collector Current (IC):60 A
  • Pulsed Collector Current (ICM):120 A
  • Collector-Emitter Saturation Voltage (VCE(sat)):1.7 V @ IC = 30 A, VGE = 15 V
  • Package:TO-220F
  • Packaging Type:Tube

USD 1.3

17

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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