GuaranTee Supplier
11 Years
MSG20T65FQS
Trench FS IGBT, Field Stop IGBT, Trench Gate IGBT, Low Gate Charge, 1.6V VCE(sat), Low Saturation Voltage, RoHS Compliant IGBT
- IGBT Technology:Field Stop (FS)
- Power Dissipation (Pd):35 W
- Collector-Emitter Breakdown Voltage (VCES):650 V
- Continuous Collector Current (IC):20 A
- Collector-Emitter Saturation Voltage (VCE(sat)):2.0 V @ IC = 20 A, VGE = 15 V
- Gate-Emitter Threshold Voltage (VGE(th)):4.5 V @ IG = 250 μA
- Package:TO-220F
- Packaging Type:Tube
USD 1.3
150
Supplier Information
Email:omnichip@ttbridge.com
Tel:15670610275
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