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OmniChip Technology
GuaranTee Supplier
11 Years
NCE30TD60BF
Featuring proprietary trench design and advanced 2nd-generation Field Stop technology, this IGBT delivers excellent conduction, fast switching and easy parallel operation.
- IGBT Technology：Field Stop (FS)
- Power Dissipation (Pd)：35.5 W
- Collector-Emitter Breakdown Voltage (VCES)：600 V
- Continuous Collector Current (IC)：60 A
- Pulsed Collector Current (ICM)：90 A
- Collector-Emitter Saturation Voltage (VCE(sat))：1.7 V @ IC = 30 A, VGE = 15 V
- Package：TO-220F-3
- Packaging Type：Tube
USD 1.8
output value: 20
Supplier Information
Email：omnichip@ttbridge.com
Tel：15670610275
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