OmniChip Technology
  • HE100R065F7HS
  • HE100R065F7HS
  • HE100R065F7HS
  • HE100R065F7HS
  • HE100R065F7HS
  • HE100R065F7HS
  • HE100R065F7HS
  • HE100R065F7HS
  • HE100R065F7HS
  • HE100R065F7HS

HE100R065F7HS

650V 100A TOLL-U IGBT delivers efficient switching performance for 10–20kHz applications, ideal for inverters, motor drives and industrial power systems.

  • IGBT Technology:Field Stop (FS)
  • Power Dissipation (Pd):395 W
  • Collector-Emitter Breakdown Voltage (VCES):650 V
  • Continuous Collector Current (IC):100 A
  • Pulsed Collector Current (ICM):300 A*
  • Collector-Emitter Cutoff Current (ICES):300 μA
  • Package:TOLL
  • Packaging Type:Tape&Reel

USD 1.1

200

contact shop

Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

Recommended products

NTR4101PT1G-MS

NTR4101PT1G-MS is a P-channel enhancement-mode power MOSFET featuring trench DMOS technology, low on-resistance, fast switching, and high avalanche energy capability.

collect:0

AO3409

AO3409 is a 30V, -3A P-channel MOSFET with 75mΩ RDS(ON) at -10V gate drive, offering fast switching for laptop power management and load switching.

collect:0

MS30N06

MS30N06 is a trench MOSFET featuring low RDS(ON), low gate charge, and 4.5V gate drive capability for battery protection and efficient switching applications.

collect:0

SIS402DN-T1-GE3-MS

SIS402DN-T1-GE3-MS is an N-channel MOSFET rated at 300V and 80A, featuring 4.7mΩ RDS(ON) for efficient power conversion and motor control.

collect:0