OmniChip Technology
  • HE10R065H6DEHW
  • HE10R065H6DEHW
  • HE10R065H6DEHW
  • HE10R065H6DEHW
  • HE10R065H6DEHW
  • HE10R065H6DEHW
  • HE10R065H6DEHW
  • HE10R065H6DEHW
  • HE10R065H6DEHW
  • HE10R065H6DEHW

HE10R065H6DEHW

650V 10A IGBT in TO-263 top-side cooling package with built-in ESD protection delivers reliable 10–20kHz switching for industrial and inverter applications.

  • IGBT Technology:Field Stop (FS)
  • Power Dissipation (Pd):188 W
  • Collector-Emitter Breakdown Voltage (VCES):650 V
  • Continuous Collector Current (IC):10 A
  • Pulsed Collector Current (ICM):10 μA
  • Collector-Emitter Cutoff Current (ICES):10 μA
  • Package:TSC-263-4L
  • Packaging Type:Tape&Reel

USD 0.5

output value: 100

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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