Product Images
Datasheet PDF
Enlarge View
Download PDF
OmniChip Technology
GuaranTee Supplier
11 Years
HE10R065H6DEHW
650V 10A IGBT in TO-263 top-side cooling package with built-in ESD protection delivers reliable 10–20kHz switching for industrial and inverter applications.
- IGBT Technology：Field Stop (FS)
- Power Dissipation (Pd)：188 W
- Collector-Emitter Breakdown Voltage (VCES)：650 V
- Continuous Collector Current (IC)：10 A
- Pulsed Collector Current (ICM)：10 μA
- Collector-Emitter Cutoff Current (ICES)：10 μA
- Package：TSC-263-4L
- Packaging Type：Tape&Reel
USD 0.5
100
Supplier Information
Email：omnichip@ttbridge.com
Tel：15670610275
Recommended products
NTR4101PT1G-MS
NTR4101PT1G-MS is a P-channel enhancement-mode power MOSFET featuring trench DMOS technology, low on-resistance, fast switching, and high avalanche energy capability.
collect：0
AO3409
AO3409 is a 30V, -3A P-channel MOSFET with 75mΩ RDS(ON) at -10V gate drive, offering fast switching for laptop power management and load switching.
collect：0
MS30N06
MS30N06 is a trench MOSFET featuring low RDS(ON), low gate charge, and 4.5V gate drive capability for battery protection and efficient switching applications.
collect：0
SIS402DN-T1-GE3-MS
SIS402DN-T1-GE3-MS is an N-channel MOSFET rated at 300V and 80A, featuring 4.7mΩ RDS(ON) for efficient power conversion and motor control.
collect：0