Product Images
Datasheet PDF
Enlarge View
Download PDF
OmniChip Technology
GuaranTee Supplier
11 Years
HE15R120H6DHW
1200V 15A IGBT in TO-263 top-side cooling package provides reliable 10–20kHz switching performance for inverters, motor drives and industrial power applications.
- IGBT Technology：Field Stop (FS)
- Power Dissipation (Pd)：682W
- Collector-Emitter Breakdown Voltage (VCES)：1.2kV
- Continuous Collector Current (IC)：15A
- Pulsed Collector Current (ICM)：100uA
- Collector-Emitter Cutoff Current (ICES)：100uA
- Package：TSC-263-4L
- Packaging Type：Tape&Reel
USD 1.2
output value: 100
Supplier Information
Email：omnichip@ttbridge.com
Tel：15670610275
Recommended products
2SD1815(RANGE:100-200)
2SD1815 is an NPN transistor with 100–200 hFE, low VCE(sat), excellent hFE linearity, high fT and fast switching performance.
collect：0
SI2319
SI2319 is a -60V P-MOSFET with 160mΩ RDS(on) and -5V logic control for load switching in SOT-23.
collect：0
MMST5551(RANGE:100-300)
MMST5551 is an NPN transistor with 100–300 hFE in a compact SMD package, complementary to MMST5401 and suitable for medium-power amplification and switching.
collect：0
JSM015N10LG
JSM015N10LG is a 100V/350A N-MOSFET with 1.2mΩ RDS(on) in TOLL-8 for high-current switching.
collect：0