OmniChip Technology
  • MDD3415
  • MDD3415
  • MDD3415
  • MDD3415
  • MDD3415
  • MDD3415
  • MDD3415
  • MDD3415
  • MDD3415
  • MDD3415

MDD3415

MOSFET featuring low RDS(on), low gate charge and low gate voltage, optimized for load switching and PWM applications with high efficiency and reliable performance.

  • Channel Configuration:Single P-Channel
  • Drain-Source Voltage (VDS):20 V
  • Continuous Drain Current (ID):4.8 A
  • On-Resistance (RDS(on)):37 mΩ @ VGS = 4.5 V
  • Power Dissipation (Pd):1.5 W
  • Gate-Source Threshold Voltage (VGS(th)):400 mV
  • Total Gate Charge (Qg):14.2 nC @ VGS = 4.5 V
  • Package:SOT-23
  • Packaging Type:Tape&Reel

USD 0.04

output value: 429500

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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