OmniChip Technology
  • MDD50N06D
  • MDD50N06D
  • MDD50N06D
  • MDD50N06D
  • MDD50N06D
  • MDD50N06D
  • MDD50N06D
  • MDD50N06D
  • MDD50N06D
  • MDD50N06D

MDD50N06D

MDD50N06D is a high-performance MOSFET designed for communication modules, industrial control, AI equipment and consumer electronics, delivering efficient and reliable switching.

  • Channel Configuration:Single N-Channel
  • Drain-Source Voltage (VDS):60V
  • Continuous Drain Current (ID):50A
  • On-Resistance (RDS(on)):17mΩ@10V
  • Power Dissipation (Pd):62.5W
  • Gate-Source Threshold Voltage (VGS(th)):2.5V
  • Package:TO-252
  • Packaging Type:Tape&Reel

USD 0.2

19000

contact shop

Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

Recommended products

NTR4101PT1G-MS

NTR4101PT1G-MS is a P-channel enhancement-mode power MOSFET featuring trench DMOS technology, low on-resistance, fast switching, and high avalanche energy capability.

collect:0

AO3409

AO3409 is a 30V, -3A P-channel MOSFET with 75mΩ RDS(ON) at -10V gate drive, offering fast switching for laptop power management and load switching.

collect:0

MS30N06

MS30N06 is a trench MOSFET featuring low RDS(ON), low gate charge, and 4.5V gate drive capability for battery protection and efficient switching applications.

collect:0

SIS402DN-T1-GE3-MS

SIS402DN-T1-GE3-MS is an N-channel MOSFET rated at 300V and 80A, featuring 4.7mΩ RDS(ON) for efficient power conversion and motor control.

collect:0