Product Images
Datasheet PDF
Enlarge View
Download PDF
GuaranTee Supplier
11 Years
MDDG10R02L is a trench-process low-VF Schottky diode designed for high-efficiency power conversion, offering low forward voltage drop and reliable switching performance.
USD 1.2
output value: 950
Email:omnichip@ttbridge.com
Tel:15670610275
2SD1815 is an NPN transistor with 100–200 hFE, low VCE(sat), excellent hFE linearity, high fT and fast switching performance.
collect:0
SI2319 is a -60V P-MOSFET with 160mΩ RDS(on) and -5V logic control for load switching in SOT-23.
collect:0
MMST5551 is an NPN transistor with 100–300 hFE in a compact SMD package, complementary to MMST5401 and suitable for medium-power amplification and switching.
collect:0
JSM015N10LG is a 100V/350A N-MOSFET with 1.2mΩ RDS(on) in TOLL-8 for high-current switching.
collect:0