OmniChip Technology
  • MDD68N10D
  • MDD68N10D
  • MDD68N10D
  • MDD68N10D
  • MDD68N10D
  • MDD68N10D
  • MDD68N10D
  • MDD68N10D
  • MDD68N10D
  • MDD68N10D

MDD68N10D

MDD68N10D is an N-channel enhancement-mode power MOSFET with optimized RDS(on), excellent switching performance, and a soft body diode for efficient power applications.

  • Channel Configuration:Single N-Channel
  • Drain-Source Voltage (VDS):60 V
  • Continuous Drain Current (ID):50 A
  • On-Resistance (RDS(on)):8 mΩ @ VGS = 10 V
  • Power Dissipation (Pd):35 W
  • Gate-Source Threshold Voltage (VGS(th)):1.7 V
  • Package:TO-252
  • Packaging Type:Tape&Reel

USD 0.4

output value: 2000

contact shop

Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

Recommended products

2SD1815(RANGE:100-200)

2SD1815 is an NPN transistor with 100–200 hFE, low VCE(sat), excellent hFE linearity, high fT and fast switching performance.

collect:0

SI2319

SI2319 is a -60V P-MOSFET with 160mΩ RDS(on) and -5V logic control for load switching in SOT-23.

collect:0

MMST5551(RANGE:100-300)

MMST5551 is an NPN transistor with 100–300 hFE in a compact SMD package, complementary to MMST5401 and suitable for medium-power amplification and switching.

collect:0

JSM015N10LG

JSM015N10LG is a 100V/350A N-MOSFET with 1.2mΩ RDS(on) in TOLL-8 for high-current switching.

collect:0