OmniChip Technology
  • SI2302S
  • SI2302S
  • SI2302S
  • SI2302S
  • SI2302S
  • SI2302S
  • SI2302S
  • SI2302S
  • SI2302S
  • SI2302S

SI2302S

SI2302S features advanced trench technology and a high-density cell design for ultra-low RDS(on), delivering efficient switching and reliable performance.

  • Channel Configuration:Single N-Channel
  • Drain-Source Voltage (VDS):20V
  • Continuous Drain Current (ID):2.3A
  • On-Resistance (RDS(on)):48mΩ@4.5V
  • Power Dissipation (Pd):600mW
  • Gate-Source Threshold Voltage (VGS(th)):600mV
  • Package:SOT-23
  • Packaging Type:Tape&Reel

USD 0.03

output value: 700

contact shop

Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

Recommended products

2SD1815(RANGE:100-200)

2SD1815 is an NPN transistor with 100–200 hFE, low VCE(sat), excellent hFE linearity, high fT and fast switching performance.

collect:0

SI2319

SI2319 is a -60V P-MOSFET with 160mΩ RDS(on) and -5V logic control for load switching in SOT-23.

collect:0

MMST5551(RANGE:100-300)

MMST5551 is an NPN transistor with 100–300 hFE in a compact SMD package, complementary to MMST5401 and suitable for medium-power amplification and switching.

collect:0

JSM015N10LG

JSM015N10LG is a 100V/350A N-MOSFET with 1.2mΩ RDS(on) in TOLL-8 for high-current switching.

collect:0