OmniChip Technology
  • MDDG04R1P9G
  • MDDG04R1P9G
  • MDDG04R1P9G
  • MDDG04R1P9G
  • MDDG04R1P9G
  • MDDG04R1P9G
  • MDDG04R1P9G
  • MDDG04R1P9G
  • MDDG04R1P9G
  • MDDG04R1P9G

MDDG04R1P9G

MDDG04R1P9G is a 60V SGT MOSFET in a PDFN5×6-8L package, featuring ultra-low RDS(on) and fast switching for high-efficiency power applications.

  • Channel Configuration:Single N-Channel
  • Drain-Source Voltage (VDS):40V
  • Continuous Drain Current (ID):150V
  • On-Resistance (RDS(on)):2.3mΩ@10V
  • Power Dissipation (Pd):89W
  • Gate-Source Threshold Voltage (VGS(th)):1.5V
  • Package:PDFN-8L(5x6)
  • Packaging Type:Tape&Reel

USD 0.4

output value: 2400

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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