OmniChip Technology
  • MDD30N06D
  • MDD30N06D
  • MDD30N06D
  • MDD30N06D
  • MDD30N06D
  • MDD30N06D
  • MDD30N06D
  • MDD30N06D
  • MDD30N06D
  • MDD30N06D

MDD30N06D

MDD30N06D is a 60V N-channel enhancement-mode power MOSFET featuring low RDS(on), efficient switching performance, and reliable operation for power management applications.

  • Channel Configuration:Single N-Channel
  • Drain-Source Voltage (VDS):60V
  • Continuous Drain Current (ID):30A
  • On-Resistance (RDS(on)):25mΩ@10V
  • Power Dissipation (Pd):37W
  • Gate-Source Threshold Voltage (VGS(th)):1.5V
  • Package:TO-252
  • Packaging Type:Tape&Reel

USD 0.1

1100

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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