OmniChip Technology
  • MDD06P03C
  • MDD06P03C
  • MDD06P03C
  • MDD06P03C
  • MDD06P03C
  • MDD06P03C
  • MDD06P03C
  • MDD06P03C
  • MDD06P03C
  • MDD06P03C

MDD06P03C

MDD06P03C is a P-channel enhancement-mode MOSFET featuring low RDS(on), fast switching, and excellent avalanche capability for efficient power switching applications.

  • Channel Configuration:Single P-Channel
  • Drain-Source Voltage (VDS):30V
  • Continuous Drain Current (ID):6A
  • On-Resistance (RDS(on)):27mΩ@10V
  • Power Dissipation (Pd):1.25W
  • Gate-Source Threshold Voltage (VGS(th)):1.5V
  • Package:SOT-23-3L
  • Packaging Type:Tape&Reel

USD 0.05

1000

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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