Product Images
Datasheet PDF
Enlarge View
Download PDF
OmniChip Technology
GuaranTee Supplier
11 Years
MDD60N02D
MDD60N02D is a high-efficiency power MOSFET featuring high current capability, high reliability, strong surge current capability, and low power consumption.
- Channel Configuration：Single N-Channel
- Drain-Source Voltage (VDS)：20V
- Continuous Drain Current (ID)：60A
- On-Resistance (RDS(on))：4.9mΩ@4.5V
- Gate-Source Threshold Voltage (VGS(th))：650mV
- Total Gate Charge (Qg)：28nC
- Package：TO-252
- Packaging Type：Tape&Reel
USD 0.1
output value: 2400
Supplier Information
Email：omnichip@ttbridge.com
Tel：15670610275
Recommended products
2SD1815(RANGE:100-200)
2SD1815 is an NPN transistor with 100–200 hFE, low VCE(sat), excellent hFE linearity, high fT and fast switching performance.
collect：0
SI2319
SI2319 is a -60V P-MOSFET with 160mΩ RDS(on) and -5V logic control for load switching in SOT-23.
collect：0
MMST5551(RANGE:100-300)
MMST5551 is an NPN transistor with 100–300 hFE in a compact SMD package, complementary to MMST5401 and suitable for medium-power amplification and switching.
collect：0
JSM015N10LG
JSM015N10LG is a 100V/350A N-MOSFET with 1.2mΩ RDS(on) in TOLL-8 for high-current switching.
collect：0