OmniChip Technology
  • MDDG03R015G
  • MDDG03R015G
  • MDDG03R015G
  • MDDG03R015G
  • MDDG03R015G
  • MDDG03R015G
  • MDDG03R015G
  • MDDG03R015G
  • MDDG03R015G
  • MDDG03R015G

MDDG03R015G

MDDG03R015G is a 30V SGT MOSFET in a PDFN5×6-8L package with ultra-low RDS(on), optimized for high-efficiency and high-speed switching applications.

  • Channel Configuration:Single N-Channel
  • Drain-Source Voltage (VDS):30V
  • Continuous Drain Current (ID):190A
  • On-Resistance (RDS(on)):1.3mΩ@10V
  • Power Dissipation (Pd):1.5V
  • Total Gate Charge (Qg):45nC
  • Package:PDFN-8L(5x6)
  • Packaging Type:Tape&Reel

USD 0.4

output value: 900

contact shop

Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

Recommended products

2SD1815(RANGE:100-200)

2SD1815 is an NPN transistor with 100–200 hFE, low VCE(sat), excellent hFE linearity, high fT and fast switching performance.

collect:0

SI2319

SI2319 is a -60V P-MOSFET with 160mΩ RDS(on) and -5V logic control for load switching in SOT-23.

collect:0

MMST5551(RANGE:100-300)

MMST5551 is an NPN transistor with 100–300 hFE in a compact SMD package, complementary to MMST5401 and suitable for medium-power amplification and switching.

collect:0

JSM015N10LG

JSM015N10LG is a 100V/350A N-MOSFET with 1.2mΩ RDS(on) in TOLL-8 for high-current switching.

collect:0