Product Images
Datasheet PDF
Enlarge View
Download PDF
OmniChip Technology
GuaranTee Supplier
11 Years
AO3401A
AO3401A uses advanced trench technology to deliver low RDS(on), low gate charge, and 2.5V gate drive, making it ideal for load switching and general-purpose applications.
- Channel Configuration：Single P-Channel
- Drain-Source Voltage (VDS)：30V
- Continuous Drain Current (ID)：4.2A
- On-Resistance (RDS(on))：50mΩ@10V
- Power Dissipation (Pd)：1.4W
- Gate-Source Threshold Voltage (VGS(th))：1.3V
- Package：SOT-23
- Packaging Type：Tape&Reel
USD 0.04
1700000
Supplier Information
Email：omnichip@ttbridge.com
Tel：15670610275
Recommended products
NTR4101PT1G-MS
NTR4101PT1G-MS is a P-channel enhancement-mode power MOSFET featuring trench DMOS technology, low on-resistance, fast switching, and high avalanche energy capability.
collect：0
AO3409
AO3409 is a 30V, -3A P-channel MOSFET with 75mΩ RDS(ON) at -10V gate drive, offering fast switching for laptop power management and load switching.
collect：0
MS30N06
MS30N06 is a trench MOSFET featuring low RDS(ON), low gate charge, and 4.5V gate drive capability for battery protection and efficient switching applications.
collect：0
SIS402DN-T1-GE3-MS
SIS402DN-T1-GE3-MS is an N-channel MOSFET rated at 300V and 80A, featuring 4.7mΩ RDS(ON) for efficient power conversion and motor control.
collect：0