OmniChip Technology
  • SI2307A
  • SI2307A
  • SI2307A
  • SI2307A
  • SI2307A
  • SI2307A
  • SI2307A
  • SI2307A
  • SI2307A
  • SI2307A

SI2307A

SI2307A features advanced trench technology with low RDS(on) and low gate charge, making it suitable for load switch and PWM applications with high efficiency.

  • Channel Configuration:Single P-Channel
  • Drain-Source Voltage (VDS):30V
  • Continuous Drain Current (ID):3A
  • Drain-Source On-Resistance (RDS(on)):50mΩ @ VGS = 10V; 70mΩ @ VGS = 4.5V
  • Power Dissipation (PD):1.25W
  • Gate Threshold Voltage (VGS(th)):3V
  • Package:SOT-23
  • Packaging Type:Tape&Reel

USD 0.05

output value: 44000

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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