Product Images
Datasheet PDF
Enlarge View
Download PDF
OmniChip Technology
GuaranTee Supplier
11 Years
20N06
20N06 features advanced trench technology with low RDS(on), low gate charge, and 60V/20A capability, delivering efficient switching performance in power applications.
- Channel Configuration：Single N-Channel
- Drain-Source Voltage (VDS)：60V
- Continuous Drain Current (ID)：20A
- Drain-Source On-Resistance (RDS(on))：23mΩ@10V；29mΩ@4.5V
- Power Dissipation (PD)：55W
- Gate Threshold Voltage (VGS(th))：1.6v
- Package：TO-252
- Packaging Type：Tape&Reel
USD 0.2
output value: 22000
Supplier Information
Email：omnichip@ttbridge.com
Tel：15670610275
Recommended products
2SD1815(RANGE:100-200)
2SD1815 is an NPN transistor with 100–200 hFE, low VCE(sat), excellent hFE linearity, high fT and fast switching performance.
collect：0
SI2319
SI2319 is a -60V P-MOSFET with 160mΩ RDS(on) and -5V logic control for load switching in SOT-23.
collect：0
MMST5551(RANGE:100-300)
MMST5551 is an NPN transistor with 100–300 hFE in a compact SMD package, complementary to MMST5401 and suitable for medium-power amplification and switching.
collect：0
JSM015N10LG
JSM015N10LG is a 100V/350A N-MOSFET with 1.2mΩ RDS(on) in TOLL-8 for high-current switching.
collect：0