OmniChip Technology
  • FDS6681Z
  • FDS6681Z
  • FDS6681Z
  • FDS6681Z
  • FDS6681Z
  • FDS6681Z
  • FDS6681Z
  • FDS6681Z
  • FDS6681Z
  • FDS6681Z

FDS6681Z

FDS6681Z is a -30V P-channel MOSFET with ultra-low RDS(on), 27nC gate charge, and 18A current capability, ideal for battery management, adapters, and charger switching.

  • Channel Configuration:Single P-Channel
  • Drain-Source Voltage (VDS):30V
  • Continuous Drain Current (ID):18A
  • Drain-Source On-Resistance (RDS(on)):5mΩ@10V;8mΩ@4.5V
  • Power Dissipation (PD):5.6E
  • Gate Threshold Voltage (VGS(th)):2.2V
  • Package:SOP-8
  • Packaging Type:Tape&Reel

USD 0.3

output value: 11000

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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