OmniChip Technology
  • SI4401BDY
  • SI4401BDY
  • SI4401BDY
  • SI4401BDY
  • SI4401BDY
  • SI4401BDY
  • SI4401BDY
  • SI4401BDY
  • SI4401BDY
  • SI4401BDY

SI4401BDY

SI4401BDY is a -40V P-channel MOSFET with ultra-low RDS(on), optimized for high-efficiency load switch and point-of-load power applications.

  • Channel Configuration:Single P-Channel
  • Drain-Source Voltage (VDS):40V
  • Continuous Drain Current (ID):16.1A
  • Drain-Source On-Resistance (RDS(on)):18mΩ@10V;29mΩ@4.5V
  • Power Dissipation (PD):6.3W
  • Gate Threshold Voltage (VGS(th)):2.5V
  • Package:SOP-8
  • Packaging Type:Tape&Reel

USD 0.3

5400

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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