Product Images
Datasheet PDF
Enlarge View
Download PDF
OmniChip Technology
GuaranTee Supplier
11 Years
FDN360P
FDN360P is a -30V P-channel trench MOSFET with ultra-low RDS(on), low gate charge, and fast switching, ideal for low-voltage and battery-powered applications.
- Channel Configuration：Single P-Channel
- Drain-Source Voltage (VDS)：30V
- Continuous Drain Current (ID)：2A
- Drain-Source On-Resistance (RDS(on))：63mΩ@10V
- Power Dissipation (PD)：500mW
- Gate Threshold Voltage (VGS(th))：1.9V
- Package：SOT-23
- Packaging Type：Tape&Reel
USD 0.6
10000
Supplier Information
Email：omnichip@ttbridge.com
Tel：15670610275
Recommended products
NTR4101PT1G-MS
NTR4101PT1G-MS is a P-channel enhancement-mode power MOSFET featuring trench DMOS technology, low on-resistance, fast switching, and high avalanche energy capability.
collect：0
AO3409
AO3409 is a 30V, -3A P-channel MOSFET with 75mΩ RDS(ON) at -10V gate drive, offering fast switching for laptop power management and load switching.
collect：0
MS30N06
MS30N06 is a trench MOSFET featuring low RDS(ON), low gate charge, and 4.5V gate drive capability for battery protection and efficient switching applications.
collect：0
SIS402DN-T1-GE3-MS
SIS402DN-T1-GE3-MS is an N-channel MOSFET rated at 300V and 80A, featuring 4.7mΩ RDS(ON) for efficient power conversion and motor control.
collect：0