OmniChip Technology
  • FDP045N10A
  • FDP045N10A
  • FDP045N10A
  • FDP045N10A
  • FDP045N10A
  • FDP045N10A
  • FDP045N10A
  • FDP045N10A
  • FDP045N10A
  • FDP045N10A

FDP045N10A

FDP045N10A is a 100V N-channel MOSFET with 100A capability, ultra-low 3.8mΩ RDS(on), low gate charge, and fast switching for high-power applications.

  • Channel Configuration:Single N-Channel
  • Drain-Source Voltage (VDS):100V
  • Continuous Drain Current (ID):164A
  • Drain-Source On-Resistance (RDS(on)):4.5mΩ@10V
  • Power Dissipation (PD):263W
  • Gate Threshold Voltage (VGS(th)):4V
  • Package:TO-220
  • Packaging Type:Tube

USD 1

output value: 1000

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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