OmniChip Technology
  • FDN338P
  • FDN338P
  • FDN338P
  • FDN338P
  • FDN338P
  • FDN338P
  • FDN338P
  • FDN338P
  • FDN338P
  • FDN338P

FDN338P

FDN338P is a -20V P-channel PowerTrench MOSFET optimized for battery-powered applications, featuring low RDS(on) for efficient load switching and DC/DC conversion.

  • Channel Configuration:Single P-Channel
  • Drain-Source Voltage (VDS):20V
  • Continuous Drain Current (ID):2.8A
  • Drain-Source On-Resistance (RDS(on)):90mΩ @ VGS = 4.5V; 110mΩ @ VGS = 2.5V
  • Power Dissipation (PD):400mW
  • Gate Threshold Voltage (VGS(th)):1V
  • Package:SOT-23
  • Packaging Type:Tape&Reel

USD 0.04

output value: 9300

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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