OmniChip Technology
  • CJAC80SN10
  • CJAC80SN10
  • CJAC80SN10
  • CJAC80SN10
  • CJAC80SN10
  • CJAC80SN10
  • CJAC80SN10
  • CJAC80SN10
  • CJAC80SN10
  • CJAC80SN10

CJAC80SN10

Shielded Gate Trench MOSFET, Advanced Trench Technology, Low RDS(ON), Low On-Resistance, Low Gate Charge, Fast Switching, Power MOSFET, High Efficiency, Power Switching

  • Channel Configuration:Single N-Channel
  • Drain-Source Voltage (VDS):100V
  • Continuous Drain Current (ID):80A
  • Drain-Source On-Resistance (RDS(on)):10.5mΩ@4.5V
  • Power Dissipation (PD):100W
  • Gate Threshold Voltage (VGS(th)):2.5V
  • Package:PDFNWB5x6-8L
  • Packaging Type:Tape&Reel

USD 0.08

output value: 6100

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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