OmniChip Technology
  • CJ3439KDW
  • CJ3439KDW
  • CJ3439KDW
  • CJ3439KDW
  • CJ3439KDW
  • CJ3439KDW
  • CJ3439KDW
  • CJ3439KDW
  • CJ3439KDW
  • CJ3439KDW

CJ3439KDW

CJ3439KDW is a dual MOSFET integrating N- and P-channel devices, offering efficient switching and compact power management for portable electronic applications.

  • Channel Configuration:1 N-Channel + 1 P-Channel
  • Drain-Source Voltage (VDS):20V
  • Continuous Drain Current (ID):750mA (N-Channel); 660mA (P-Channel)
  • Drain-Source On-Resistance (RDS(on)):380mΩ @ VGS = 4.5V
  • Power Dissipation (PD):-
  • Gate Threshold Voltage (VGS(th)):350mV
  • Package:SOT-363
  • Packaging Type:Tape&Reel

USD 0.9

115000

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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