OmniChip Technology
  • CJT04N15
  • CJT04N15
  • CJT04N15
  • CJT04N15
  • CJT04N15
  • CJT04N15
  • CJT04N15
  • CJT04N15
  • CJT04N15
  • CJT04N15

CJT04N15

CJT04N15 features advanced trench MOSFET technology, providing excellent RDS(on) and low gate charge for efficient switching across a wide range of applications.

  • Channel Configuration:Single N-Channel
  • Drain-Source Voltage (VDS):150V
  • Continuous Drain Current (ID):4A
  • Drain-Source On-Resistance (RDS(on)):160mΩ@10V
  • Power Dissipation (PD):-
  • Gate Threshold Voltage (VGS(th)):2.5V
  • Package:SOT-223
  • Packaging Type:Tape&Reel

USD 0.2

9300

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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