OmniChip Technology
  • CJQ4435A
  • CJQ4435A
  • CJQ4435A
  • CJQ4435A
  • CJQ4435A
  • CJQ4435A
  • CJQ4435A
  • CJQ4435A
  • CJQ4435A
  • CJQ4435A

CJQ4435A

CJQ4435A features advanced trench MOSFET technology, providing excellent RDS(on) and low gate charge for efficient switching performance across a wide range of applications.

  • Channel Configuration:Single P-Channel
  • Drain-Source Voltage (VDS):30V
  • Continuous Drain Current (ID):9.9A
  • Drain-Source On-Resistance (RDS(on)):25mΩ@4.5V
  • Power Dissipation (PD):2.5W
  • Gate Threshold Voltage (VGS(th)):2.2V
  • Package:SOP-8
  • Packaging Type:Tape&Reel

USD 0.15

6600

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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