Product Images
Datasheet PDF
Enlarge View
Download PDF
OmniChip Technology
GuaranTee Supplier
11 Years
CJU80SN10
CJU80SN10 features shielded-gate trench technology, providing excellent RDS(on) and low gate charge for efficient switching across a wide range of applications.
- Channel Configuration：Single N-Channel
- Drain-Source Voltage (VDS)：100V
- Continuous Drain Current (ID)：80A
- Drain-Source On-Resistance (RDS(on))：10.5mΩ @ 4.5V
- Power Dissipation (PD)：125W
- Gate Threshold Voltage (VGS(th))：2.5V
- Package：TO-252-2L
- Packaging Type：Tape&Reel
USD 0.7
8900
Supplier Information
Email：omnichip@ttbridge.com
Tel：15670610275
Recommended products
2N7002NXAKR-MS
2N7002NXAKR-MS is a 60V, 300mA N-channel MOSFET in a SOT-23 package, featuring low on-resistance and low power consumption for switching and power management.
collect：0
FDC6327C-MS
FDC6327C-MS is a fast-switching MOSFET designed for efficient load switching in laptops and network equipment, with green product options available.
collect：0
T2N7002AK-MS
T2N7002AK-MS is a 60V, 300mA N-channel MOSFET in a SOT-23 package, featuring low on-resistance and low power consumption for switching and power management.
collect：0
AO4832-MS
AO4832-MS is an N-channel enhancement-mode power MOSFET featuring trench DMOS technology, low RDS(ON), fast switching, and high-energy pulse capability.
collect：0