GuaranTee Supplier
11 Years
CJAC110SN10A
CJAC110SN10A features shielded-gate trench technology, providing excellent RDS(on) and low gate charge for efficient switching across a wide range of applications.
- Channel Configuration:Single N-Channel
- Drain-Source Voltage (VDS):100V
- Continuous Drain Current (ID):110A
- Drain-Source On-Resistance (RDS(on)):4.2mΩ@10V
- Power Dissipation (PD):125W
- Gate Threshold Voltage (VGS(th)):2.4V
- Package:PDFNWB5x6-8L
- Packaging Type:Tape&Reel
USD 1.2
30
Supplier Information
Email:omnichip@ttbridge.com
Tel:15670610275
Recommended products
2N7002NXAKR-MS
2N7002NXAKR-MS is a 60V, 300mA N-channel MOSFET in a SOT-23 package, featuring low on-resistance and low power consumption for switching and power management.
collect:0
FDC6327C-MS
FDC6327C-MS is a fast-switching MOSFET designed for efficient load switching in laptops and network equipment, with green product options available.
collect:0
T2N7002AK-MS
T2N7002AK-MS is a 60V, 300mA N-channel MOSFET in a SOT-23 package, featuring low on-resistance and low power consumption for switching and power management.
collect:0
AO4832-MS
AO4832-MS is an N-channel enhancement-mode power MOSFET featuring trench DMOS technology, low RDS(ON), fast switching, and high-energy pulse capability.
collect:0









