OmniChip Technology
  • CJAC2R5SN04C
  • CJAC2R5SN04C
  • CJAC2R5SN04C
  • CJAC2R5SN04C
  • CJAC2R5SN04C
  • CJAC2R5SN04C
  • CJAC2R5SN04C
  • CJAC2R5SN04C
  • CJAC2R5SN04C
  • CJAC2R5SN04C

CJAC2R5SN04C

CJAC2R5SN04C is an SGT N-channel power MOSFET with ultra-low RDS(on), excellent switching performance, and high-energy avalanche and commutation capability.

  • Channel Configuration:Single N-Channel
  • Drain-Source Voltage (VDS):40V
  • Continuous Drain Current (ID):130A
  • Drain-Source On-Resistance (RDS(on)):-
  • Power Dissipation (PD):96W
  • Gate Threshold Voltage (VGS(th)):2.5V
  • Package:PDFNWB5x6-8L
  • Packaging Type:Tape&Reel

USD 0.5

3500

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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