OmniChip Technology
  • CJ1012 C
  • CJ1012 C
  • CJ1012 C
  • CJ1012 C
  • CJ1012 C
  • CJ1012 C
  • CJ1012 C
  • CJ1012 C
  • CJ1012 C
  • CJ1012 C

CJ1012 C

CJ1012C is a single N-channel MOSFET featuring advanced power trench technology designed to optimize RDS(on) for efficient switching performance.

  • Channel Configuration:Single N-Channel
  • Drain-Source Voltage (VDS):20V
  • Continuous Drain Current (ID):500mA
  • Drain-Source On-Resistance (RDS(on)):850mΩ@2.5V
  • Power Dissipation (PD): 275mW
  • Gate Threshold Voltage (VGS(th)):1.2V
  • Package:SOT-523-3
  • Packaging Type:Tape&Reel

USD 0.05

output value: 10000

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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