Product Images
Datasheet PDF
Enlarge View
Download PDF
OmniChip Technology
GuaranTee Supplier
11 Years
CJU65P06
CJU65P06 features advanced trench technology, providing excellent RDS(on) and low gate charge for efficient switching across a wide range of applications.
- Channel Configuration：Single P-Channel
- Drain-Source Voltage (VDS)：60V
- Continuous Drain Current (ID)：65A
- Drain-Source On-Resistance (RDS(on))：18mΩ@10V
- Power Dissipation (PD)：120W
- Gate Threshold Voltage (VGS(th))：3V
- Package：TO-252-2L
- Packaging Type：Tape&Reel
USD 0.8
1500
Supplier Information
Email：omnichip@ttbridge.com
Tel：15670610275
Recommended products
NTR4101PT1G-MS
NTR4101PT1G-MS is a P-channel enhancement-mode power MOSFET featuring trench DMOS technology, low on-resistance, fast switching, and high avalanche energy capability.
collect：0
AO3409
AO3409 is a 30V, -3A P-channel MOSFET with 75mΩ RDS(ON) at -10V gate drive, offering fast switching for laptop power management and load switching.
collect：0
MS30N06
MS30N06 is a trench MOSFET featuring low RDS(ON), low gate charge, and 4.5V gate drive capability for battery protection and efficient switching applications.
collect：0
SIS402DN-T1-GE3-MS
SIS402DN-T1-GE3-MS is an N-channel MOSFET rated at 300V and 80A, featuring 4.7mΩ RDS(ON) for efficient power conversion and motor control.
collect：0